Specifications
| Specification | Details |
| Brand | Samsung |
| Model | 9100 PRO (MZ-VAP8T0BW) |
| Capacity | 8 TB |
| Form Factor | M.2 2280 |
| Interface | PCIe 5.0 x4, NVMe 2.0 |
| Controller | Samsung Presto 5-core ARM Cortex-R8 |
| NAND Flash | Samsung V-NAND TLC |
| DRAM Cache | 8 GB LPDDR4X |
| Sequential Read/Write | Up to 14,800/13,400 MB/s |
| Random IOPS | Up to 2,200K read / 2,600K write |
| Endurance | 4,800 TBW |
| Encryption | AES-256, TCG/Opal 2.0, Microsoft eDrive |
| Operating Temperature | 0–70 °C |
| Supported Features | NVMe 2.0, TRIM, SMART, Device Sleep |
| Country of Origin | South Korea |
| Model Number | MZ-VAP8T0BW |
| Warranty | 5 Years |
| Weight | 9.5 g |
Key Features
- Massive 8 TB Capacity: Provides high-speed, spacious storage ideal for demanding applications, large games, and extensive media libraries.
- Next-Gen PCIe 5.0 Performance: Utilizes the PCIe 5.0 x4 interface to deliver sequential read speeds of up to 14,800 MB/s and write speeds of up to 13,400 MB/s.
- Advanced Controller & Cache: Driven by a Samsung Presto 5-core ARM Cortex-R8 controller paired with 8 GB of LPDDR4X DRAM cache for optimized data processing.
- Blazing-Fast Random Speeds: Achieves up to 2,200K random read IOPS and 2,600K random write IOPS for lightning-fast application loading and system responsiveness.
- High Endurance Rating: Offers a robust 4,800 TBW (Terabytes Written) durability rating, built with Samsung V-NAND TLC technology to handle heavy workloads.
- Enterprise-Level Security: Supports hardware-level AES-256, TCG/Opal 2.0, and Microsoft eDrive encryption to secure sensitive data.
- 5-Year Warranty: Backed by a 5-year limited warranty for long-term reliability and peace of mind.
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